E. Makino

发表

Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000 1 ¯ ), and (1 1 ¯ 00) surfaces

K. Shiraishi, Y. Kangawa, S. Onda, 2019, Japanese Journal of Applied Physics.

Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis

H. Tsuboi, H. Takaba, A. Miyamoto, 2008 .

Construction of a table-top ion storage ring and its application to cross section measurements

H. Shiromaru, J. Matsumoto, E. Makino, 2019, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Fast growth of n-type 4H-SiC bulk crystal by gas-source method

H. Tsuchida, I. Kamata, J. Kojima, 2017 .

Stable and high-speed SiC bulk growth without dendrites by the HTCVD method

H. Tsuchida, I. Kamata, J. Kojima, 2016 .

High-speed, high-quality crystal growth of 4H-SiC by high-temperature gas source method

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects

C. Del Carpio, M. Koyama, H. Tsuboi, 2008 .

Developing Technologies of SiC Gas Source Growth Method

H. Tsuchida, I. Kamata, J. Kojima, 2016 .

Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2016 .

Deflection of threading dislocations in patterned 4H–SiC epitaxial growth

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

SiC HTCVD Simulation Modified by Sublimation Etching

S. Onda, M. Nagakubo, K. Ikeda, 2006 .

High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method

H. Tsuchida, J. Kojima, Naohiro Sugiyama, 2015 .

Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2018, Materials Science Forum.

Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques

H. Tsuchida, I. Kamata, J. Kojima, 2014 .

Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method

H. Tsuchida, I. Kamata, J. Kojima, 2016 .