H. Schaber

Session 15 Device technology — CMOS and BIPOLAR process integration

H. Schaber, H. Grinolds, 1987 .

Double Self Aligned Bipolar Transistors using Salicide Contacts

H. Schaber, H. Kabza, H. Eggers, 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

A 1- mu m polysilicon self-aligning bipolar process for low-power high-speed integrated circuits

T.F. Meister, M. Miura-Mattausch, R. Kopl, 1989, IEEE Electron Device Letters.

ARSENIC SEGREGATION IN POLYSILICON AND AT THE POLY/SINGLE CRYSTALLINE SILICON INTERFACE

H. Schaber, H. Oppolzer, W. Eckers, 1985 .

Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors

H. Schaber, T. Meister, J. Bieger, 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

Shallow Junction Formation using CoSi2 as a Diffusion Source

K. Maex, H. Schaber, V. Probst, 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

Analysis of Polysilicon Diffusion Sources

H. Schaber, V. Probst, H. Böhm, 1988 .

Laser-recrystallized polysilicon resistors for sensing and integrated circuits applications☆

H. Schaber, E. Obermeier, Josef Dr. Dipl.-Phys. Binder, 1983 .

Electronic shell structure in NaO clusters

H. Schaber, T. P. Martin, H. Schaber, 1989 .