Y. Lee

Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

Yao-Jen Lee, C. Hu, P. Sung, 2012, 2012 International Electron Devices Meeting.

1 Improvement of Electrical Performance in P-Channel 2 LTPS Thin-Film Transistor with a-Si : H Surface 3 Passivation 4

J. Park, J. Yi, K. Jang, 2018 .

Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

J. Kwo, T. Ma, M. Hong, 2007 .

Study on the Roles of Charge Trapping and Fixed Charge on Subthreshold Characteristics of FeFETs

C. Su, P. Sung, C. Jin, 2021, IEEE Transactions on Electron Devices.

3D Integration of Vertical-Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers

C. Yao, C. Su, T. Hong, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications

C. Wang, C. Su, P. Sung, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).