S. Chuang

Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

Yao-Jen Lee, C. Hu, P. Sung, 2012, 2012 International Electron Devices Meeting.

Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

Yao-Jen Lee, T. Tseng, F. Hsueh, 2011, IEEE Electron Device Letters.

Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review

Yao-Jen Lee, C. Hu, P. Sung, 2014, IEEE Transactions on Electron Devices.

Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices

P. Sung, K. Kao, T. Tseng, 2017 .

Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION

W.-F. Wu, C. Wang, C. Su, 2017, 2017 Symposium on VLSI Technology.

Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology

Guo-Wei Huang, Tuo-Hung Hou, Tien-Sheng Chao, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

Yao-Jen Lee, G. Luo, C. Chien, 2016, IEEE Transactions on Electron Devices.