I. Asenova

发表

Incorporation of nitrogen into TiO2 thin films during PVD processes

S. Mändl, D. Manova, I. Asenova, 2014 .

Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

N. Ekins‐Daukes, A. Mellor, D. Alonso-Álvarez, 2018 .

Nitrogen incorporation during PVD deposition of TiO2:N thin films

S. Mändl, U. Decker, L. F. Arias, 2017 .

Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys

I. Ivanov, N. Ekins-Daukes, D. Alonso-Álvarez, 2017 .

Tunnelling and current density in short period strained AlN/GaN superlattices

E. Valcheva, I. Asenova, D. Arnaudov, 2014 .

Influence of the structural inhomogeneity on the luminescent properties of nitride multiple quantum wells grown by MOCVD

E. Valcheva, K. Kirilov, I. Asenova, 2014 .

Polarization dependence of III-nitride superlattice transmission coefficient

E. Valcheva, I. Asenova, 2012 .