M. Sugiyama

Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga–Al liquid‐phase epitaxy

H. Fukuyama, M. Adachi, A. Tanaka, 2015 .

High-Quality AlN Layer Homoepitaxially Grown on Nitrided a-Plane Sapphire Using a Ga–Al Flux

H. Fukuyama, K. Tsuda, M. Adachi, 2013 .

The reactivation of phenylmethanesulfonyl-subtilisin.

H. Matsumiya, N. Uemitsu, M. Sugiyama, 1972, Biochimica et Biophysica Acta.

Characteristics of a Surgical Snare Using Microwave Energy

Kazuyuki Saito, Masashi Sugiyama, M. Sugiyama, 2018, Diagnostics.

The reaction of halogenated biacetyl monoximes with esters of amino acids.

M. Masaki, M. Sugiyama, M. Ota, 1966, Bulletin of the Chemical Society of Japan.

Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH3)4)

R. Saito, H. Isshiki, M. Wada, 2003 .