Haochen Zhao

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

Kun Qian, J. Kolodzey, Cheng Li, 2022, Journal of Alloys and Compounds.

Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors

Y. Chueh, J. Xiao, Yuping Zeng, 2019, Journal of Physics D: Applied Physics.

InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric

L. Gundlach, Yuping Zeng, Peng Cui, 2020, Japanese Journal of Applied Physics.

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

J. Kolodzey, Cheng Li, Songyan Chen, 2023, Nanophotonics.

Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer

A. T. Johnson, Meng-qiang Zhao, L. Gundlach, 2019, Journal of Physics D: Applied Physics.

Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing

Yuping Zeng, R. Hickey, Peng Cui, 2023, Vacuum.

Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment

A. T. Johnson, Meng-qiang Zhao, L. Gundlach, 2020, Journal of Physics D: Applied Physics.

The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs

Yuping Zeng, Peng Cui, Guangyang Lin, 2019, Journal of Physics D: Applied Physics.