Abdulla Said

发表

Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics

H. Stanchu, Solomon Ojo, O. Olorunsola, 2022, Journal of Crystal Growth.

Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications

G. Salamo, W. Du, Shui-Qing Yu, 2022, Journal of Physics D: Applied Physics.

Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys

G. Salamo, J. Margetis, J. Tolle, 2021, Crystals.

SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review

G. Salamo, W. Du, Shui-Qing Yu, 2022, Journal of Physics D: Applied Physics.

Depth-Dependent Photoluminescence Characteristic of Gesn/Sigesn Multi-Quantum Wells

S. Yu, Chen Li, F. M. de Oliveira, 2022, SSRN Electronic Journal.

Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits

W. Du, Shui-Qing Yu, G. Chang, 2023, OPTO.

Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers

F. M. de Oliveira, H. Stanchu, O. Olorunsola, 2023, Journal of Vacuum Science & Technology B.