C Hamaguchi

Experimental characterization of the continuous switching regime in floating-body PD SOI MOSFETs

Andrea L. Lacaita, S. Maegawa, L. M. Perron, 1998 .

Transient behavior and low VDS hysteresis in PD SOI MOSFETs

C Hamaguchi, Andrea L. Lacaita, Yasuo Yamaguchi, 1998 .

Electron Mobility in Si Inversion Layers

Kenji Taniguchi, C Hamaguchi, K. Taniguchi, 1989 .