I. Eisele

发表

Direct capacitance measurements of small geometry MOS transistors

P. Vitanov, T. Dimitrova, I. Eisele, 1991 .

Temperature controlled phase transition as a detection principle for gas FETs (TPT-FET)

C. Senft, H.P. Frerichs, I. Eisele, 2008, 2008 IEEE Sensors.

A Novel Vertical Impact Ionisation MOSFET (I-MOS) Concept

M. Schmidt, I. Eisele, U. Abelein, 2006, 2006 25th International Conference on Microelectronics.

Lateral compensation structures can break the silicon limit

G. Deboy, I. Eisele, C. Tolksdorf, 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

A GasFET concept for high temperature operation

C. Senft, I. Eisele, P. Iskra, 2008, 2008 IEEE Sensors.

Smart capacitive CO2 sensor

I. Eisele, C. Kutter, J. Boudaden, 2016, 2016 IEEE SENSORS.

Tunnel FET: A CMOS Device for high Temperature Applications

M. Schmidt, I. Eisele, U. Abelein, 2006, 2006 25th International Conference on Microelectronics.

Low power gas detection with FET sensors

I. Eisele, T. Doll, I. Eisele, 2001 .

Molecular beam evaporation-grown indium oxide and indium aluminium films for low-temperature gas sensors

Theodor Doll, I. Eisele, A. Fuchs, 2000 .

Influence of gate oxide breakdown on MOSFET device operation

I. Eisele, Martin Kerber, Helmut Wurzer, 2000 .

Enhanced room temperature gas sensing with metal oxides by means of the electroadsorptive effect in hybrid suspended gate FET

Theodor Doll, I. Eisele, A. Fuchs, 1999 .

Influence of soft breakdown on NMOSFET device characteristics

I. Eisele, Martin Kerber, Helmut Wurzer, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Field-effect-induced gas sensitivity changes in metal oxides

Theodor Doll, I. Eisele, Gerhard Müller, 1997 .

Light enhanced NO2 gas sensing with tin oxide at room temperature: conductance and work function measurements

I. Eisele, M. Zimmer, A. Karthigeyan, 2003 .

Gold and platinum as ozone sensitive layer in work-function gas sensors

I. Eisele, M. Zimmer, T. Doll, 2001 .

Hydrogen detection at high concentrations with stabilised palladium

I. Eisele, M. Zimmer, A. Karthigeyan, 2001 .

Electrical characterization of feature sizes and parasitic capacitances using a single test structure

P. Vitanov, I. Eisele, U. Schwabe, 1984, IEEE Transactions on Electron Devices.

Scaling issues of n-channel vertical tunnel FET with /spl delta/p/sup +/ SiGe layer

I. Eisele, J. Schulze, K.K. Bhuwalka, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Electrical field impact on the gas adsorptivity of thin metal oxide films

Theodor Doll, I. Eisele, A. Fuchs, 1998 .

Investigation of the spatial resolution of the light-addressable potentiometric sensor

Wolfgang J. Parak, I. Eisele, Werner Moritz, 2000 .

A GasFET for chlorine detection

W. Widanarto, I. Eisele, G. Freitag, 2005, IEEE Sensors, 2005..

Conductivity and work function ozone sensors based on indium oxide

Theodor Doll, Giorgio Sberveglieri, I. Eisele, 1998 .

Contribution of interface traps to valence band electron tunneling in PMOS devices

M. Kerber, I. Eisele, H. Wurzer, 2000, 30th European Solid-State Device Research Conference.

Humidity and temperature compensation in work function gas sensor FETs

I. Eisele, M. Zimmer, I. Eisele, 2003 .

Stability of FET - Based Hydrogen Sensors at High Temperatures

T. Galonska, C. Senft, W. Widanarto, 2007, 2007 IEEE Sensors.

Influence of oxidation temperature, film thickness and substrate on NO2 sensing of SnO2 ultra thin films

R. P. Gupta, S. K. Sharma, I. Eisele, 2002 .

Delta-type doping profiles in silicon

I. Eisele, I. Eisele, 1989 .

Room temperature ozone sensing with KI layers integrated in HSGFET gas sensors

Theodor Doll, I. Eisele, A. Fuchs, 1998 .