Stefan Zollner

发表

2004 IEEE International Conference on Integrated Circuit Design and Technology

M. Mendicino, Marius K. Orlowski, Sriram Kalpat, 2004 .

Selecting an Operating System, Part I: OS/2 2.X

James R. Matey, Stefan Zollner, 1994 .

Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon

Bernard S. Meyerson, Reuben T. Collins, Stefan Zollner, 1992, Other Conferences.

2005 International Conference on Characterization and Metrology for ULSI Technology

David G. Seiler, Alain C. Diebold, Alain C. Diebold, 2005 .

Subwavelength antimonide infrared detector coupled with dielectric resonator antenna

Sanjay Krishna, Anthony Grbic, Thomas E. Vandervelde, 2019, Defense + Commercial Sensing.

Intervalley scattering times from the rigid-pseudoion method

Stefan Zollner, Sudha Gopalan, Manuel Cardona, 1990, Other Conferences.

Characterization and metrology for ULSI technology : 2003 international conference on characterization and metrology for ULSI technology, Austin, Texas 24-28 March 2003

Thomas J. Shaffner, David G. Seiler, Alain C. Diebold, 2003 .

Alloy versus phonon contributions to intervalley scattering in Al1-xGaxAs

Christoph H. Grein, Stefan Zollner, Manuel Cardona, 1992, Other Conferences.

Metrology Challenges for 45 nm Strained‐Si Devices

R. Powers, Aaron Thean, Victor H. Vartanian, 2005 .

Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry

John A. Woollam, Stefan Zollner, Thomas E. Tiwald, 1999 .

Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV

Stefan Zollner, S. Zollner, 2001 .

Optical properties of bulk and thin-film SrTiO3 on Si and Pt

John A. Woollam, James N. Hilfiker, Alexander A. Demkov, 2000 .

SnGe superstructure materials for Si-based infrared optoelectronics

David Smith, John Tolle, Stefan Zollner, 2003 .

Model dielectric functions for native oxides on compound semiconductors

Stefan Zollner, S. Zollner, 1993 .

Versatile buffer layer architectures based on Ge1−xSnx alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2005 .

Optical constants and interband transitions of Ge1−xSnx alloys (x<0.2) grown on Si by UHV-CVD

Stefan Zollner, John Kouvetakis, Jose Menendez, 2004 .

Dielectric response of thick low dislocation‐density Ge epilayers grown on (001) Si

James Kolodzey, Stefan Zollner, M. W. Dashiell, 1996 .

Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study

Stefan Zollner, John Kouvetakis, Jose Menendez, 2006 .

New Ge-Sn materials with adjustable bandgaps and lattice constants

John Tolle, Stefan Zollner, John Kouvetakis, 2002 .

Exploration of the Scaling Limits of 3D Integration

Jian-Qiang Lu, Robert E. Jones, Ronald J. Gutmann, 2006 .

HfO2 Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium

M. Ramon, Bich-Yen Nguyen, R. Nieh, 2003 .

Ellipsometric and Kerr-effect studies of Pt3−X (X=Mn,Co)

Stefan Zollner, David W. Lynch, Paul C. Canfield, 1998 .

Metrology Of Silicide Contacts For Future CMOS

Aaron Thean, Bill Taylor, Victor H. Vartanian, 2007 .

Optical and structural properties of SixSnyGe1−x−y alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2004 .

Structural, optical, and electrical properties of strained La-doped SrTiO3 films

Alexander A. Demkov, Martin M. Frank, Stefan Zollner, 2014 .

Ge–Sn semiconductors for band-gap and lattice engineering

Stefan Zollner, John Kouvetakis, Jose Menendez, 2002 .