K. Maekawa

Chemical potential shift induced by double-exchange and polaronic effects inNd1−xSrxMnO3

Y. Tomioka, Y. Tokura, A. Fujimori, 2007, 0710.4462.

Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas

P. Lefaucheux, R. Dussart, T. Tillocher, 2015 .

Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma

P. Lefaucheux, R. Dussart, T. Tillocher, 2019, Applied Physics Letters.

Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas

C. Cardinaud, H. Kim, A. Girard, 2022, Journal of Vacuum Science & Technology A.