R. Katsumi

1.48 mu m high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes

S. Namiki, A. Kasukawa, N. Iwai, 1993 .

Separate-Confinement-Heterostructure Multiple-Quantum-Well Laser Diodes

S. Namiki, A. Kasukawa, N. Iwai, 1993 .

Growth of a (GaAs)n/(InAs)n Superlattice Semiconductor by Molecular Beam Epitaxy

H. Ohno, H. Hasegawa, T. Takama, 1985 .