Gregory W. Grynkewich

Technology Status and Potential for High Speed Nonvolatile Magnetoresistive RAM

Jon M. Slaughter, Saied N. Tehrani, J. Janesky, 2000 .

Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions

P. Brown, Saied N. Tehrani, Mark A. Durlam, 2004 .

The Effect of Aluminum vs. Photoresist Masking on the Etching Rates of Silicon and Silicon Dioxide in CF 4 / O 2 Plasmas

Theodore H. Fedynyshyn, Terence B. Hook, Tso-Ping Ma, 1987 .

MgO-based tunnel junction material for high-speed toggle magnetic random access memory

Saied N. Tehrani, Renu W. Dave, Jijun Sun, 2006, IEEE Transactions on Magnetics.

A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

Saied N. Tehrani, A. Omair, M. DeHerrera, 2003, IEEE J. Solid State Circuits.