Suvarna Babras

Defect creation by 10‐keV electron irradiation in phosphorous‐doped a‐Si:H

S. Bhoraskar, V. Bhide, N. Rajopadhye, 1990 .

Light-induced defect studies in hydrogenated amorphous silicon by exoelectron emission

S. Bhoraskar, V. Bhide, S. K. Pawar, 1990 .

Dependence of effective doping on structural order in hydrogenated amorphous silicon

S. Jadkar, R. Dusane, V. Bhide, 1991 .

Effect of rf power on the structure and related gap states in hydrogenated amorphous silicon

R. Dusane, V. Bhide, S. Kshirsagar, 1990 .

Frequency resolved EBIC measurements for determination of the density of localized states in a-Si:H

S. Bhoraskar, V. Bhide, N. Rajopadhye, 1988 .

Tail states in hydrogenated amorphous silicon studied by thermoluminescence

S. Bhoraskar, P. Vidyasagar, Suvarna Babras, 1991 .