N. Matsumoto

Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE

T. Ijichi, M. Irikawa, A. Nakai, 1988 .

Low-threshold-current, high-quantum-efficiency 1.5 mu m GaInAs-GaInAsP GRIN-SCH single quantum well laser diodes

A. Kasukawa, H. Okamoto, T. Namegaya, 1991 .

High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes

A. Kasukawa, H. Okamoto, T. Fukushima, 1989 .

Temperature Dependence of Emission Wavelength in 1.3 μm GaInAsP/InP GRIN-SCH MQW Laser Diodes Grown by MOCVD

A. Kasukawa, H. Okamoto, T. Fukushima, 1990, Quantum Wells for Optics and Optoelectronics.

Near-ultraviolet light-emitting diodes based on /spl sigma/-conjugated linear silicon-backbone polymers

S. Toyoda, S. Hoshino, Hiroyuki Suzuki, 1998 .

1.3- mu m GaInAsP/InP transverse-mode stabilized buried-crescent lasers by a new fabrication technique using a reactive ion beam etching

A. Kasukawa, T. Makino, M. Iwase, 1989 .

Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures

H. Ohno, K. Ohtani, H. Sakuma, 2003 .

High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers

H. Okamoto, M. Ohkubo, N. Matsumoto, 1990, 12th IEEE International Conference on Semiconductor Laser.

Selective MOCVD Growth for Application to GaAs/AlGaAs Buried Heterostructure Lasers

S. Kashiwa, N. Matsumoto, Tamotsu Iwasaki, 1986 .