P. Skevington

发表

The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers

P. Rees, P. Blood, G. Davies, 1995 .

Anomalous silicon and tin doping behaviour in indium phosphide grown by chemical beam epitaxy

G. J. Davies, G. Davies, D. Andrews, 1990 .

Modulated molecular beam mass spectrometry studies of the growth of GaAs and InxGa1−xAs using tri-isobutylgallium

G. J. Davies, J. Foord, C. Levoguer, 1994 .

Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxy

C. L. French, E. Scott, J. Foord, 1991 .

Reaction mechanisms governing the selected-area growth of III-V semiconductors by chemical beam epitaxy

C. L. French, J. Foord, C. Levoguer, 1993 .

Anomalous silicon and tin doping behavior in indium phosphide grown by chemical beam epitaxy

G. Davies, D. Andrews, P. Skevington, 1990 .

Growth of InP/InGaAs multiple quantum well structures by chemical beam epitaxy

M. H. Lyons, G. Davies, M. Halliwell, 1992 .

Selective area growth of III–V compound semiconductors by chemical beam epitaxy

C. L. French, J. Foord, G. Davies, 1992 .

Surface Reaction Mechanisms Governing the Selective Area Growth of III-V Compound Semiconductors by Chemical Beam Epitaxy

C. L. French, J. Foord, C. Levoguer, 1992 .

Some comparisons of chemical beam epitaxy InGaAs/InP growth using triethylgallium, triisopropylgallium and triisobutylgallium sources

G. J. Davies, S. Rushworth, J. Foord, 1994 .

Doping level anomalies resulting from exposure to dopant precursors during cooling in MOVPE

W. J. Duncan, W. Rothwell, S. Cole, 1991 .

Growth and MBMS studies of reaction mechanisms for InxGa1−xAs CBE

G. J. Davies, J. Foord, N. Singh, 1992 .

An Introduction to Electronic Commerce

S. G. E. Garrett, P. J. Skevington, S. Garrett, 1999 .

Trusted third parties in electronic commerce

P. J. Skevington, T. P. Hart, P. Skevington, 1997 .

Selective area growth for opto-electronic integrated circuits (OEICs)

G. J. Davies, P. J. Skevington, John S. Foord, 1991 .