Hitoshi Sakane

A 60-GHz CMOS Transmitter with Gain-Enhanced On-Chip Antenna for Short-Range Wireless Interconnections

Kenichi Okada, Ning Li, Akira Matsuzawa, 2015, IEICE Trans. Electron..

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

T. Mii, S. Harada, M. Kato, 2022, Scientific Reports.

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

T. Mii, S. Harada, M. Kato, 2022, Scientific Reports.

Influence of Defect Morphology on Absolute Jc Value in Heavy-Ion Irradiated REBCO Films

S. Semboshi, T. Ozaki, T. Nishizaki, 2023, IEEE Transactions on Applied Superconductivity.

Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation

T. Mii, S. Harada, M. Kato, 2022, Materials Science in Semiconductor Processing.

High- $Q$ Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits

Kenichi Okada, Akira Matsuzawa, Ning Li, 2014, IEEE Transactions on Electron Devices.

Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective

Hitoshi Sakane, Masashi Kato, Shunta Harada, 2024, Japanese Journal of Applied Physics.

Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation

T. Mii, S. Harada, M. Kato, 2023, Applied Physics Express.