Vinay Bhagwat

Characterization of InGaSb detectors for 1.0- to 2.4-μm applications

Tamer F. Refaat, M. Nurul Abedin, Upendra N. Singh, 2004, SPIE Defense + Commercial Sensing.

Dry etching, surface passivation and capping processes for antimonide based photodetectors

Vinay Bhagwat, Partha S. Dutta, Jeffery Langer, 2005, SPIE Defense + Commercial Sensing.

Dark current reduction of GaInAsSb based photodetectors by surface treatment with octadecylthiol

Yegao Xiao, Ishwara B. Bhat, Vinay Bhagwat, 2007, SPIE Organic Photonics + Electronics.

Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

Tamer F. Refaat, M. Nurul Abedin, Yegao Xiao, 2006 .

InGaSb photodetectors using an InGaSb substrate for 2μm applications

Tamer F. Refaat, M. Nurul Abedin, Upendra N. Singh, 2004 .