Y. Nomura

Composition dependence of photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy

K. Shinozaki, S. Naritsuka, T. Yuasa, 1984 .

Bound excitons in Si‐doped GaAs/Al0.22Ga0.78As single quantum wells

K. Shinozaki, M. Ishii, Y. Nomura, 1985 .

Effects of thermal annealing on Si‐doped GaAs grown by molecular beam epitaxy

K. Shinozaki, M. Mihara, M. Ishii, 1985 .

Influence of growth conditions and alloy composition on deep electron traps of n‐AlxGa1−xAs grown by MBE

S. Naritsuka, T. Yuasa, M. Mihara, 1984 .

Ionized Mg doping in molecular‐beam epitaxy of GaAs

K. Shinozaki, M. Mihara, M. Ishii, 1986 .

Defect‐related emissions in photoluminescence spectra of AlxGa1−xAs grown by molecular beam epitaxy

K. Shinozaki, S. Naritsuka, T. Yuasa, 1984 .