C. Guillemot

Temperature dependence of electron mobility in GaAs/GaAlAs modulation doped quantum wells

M. Gauneau, J. Portal, M. Baudet, 1986 .

Influence of the well composition and thickness in the GaInP/InP/GaInAs/InP structure for HEMT

A. Le Corre, S. Loualiche, D. Lecrosnier, 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.

SIMS analysis, under caesium bombardment, of Si in GaAs/(Al, Ga) as superlattices: Detection limit and depth resolution

M. Gauneau, R. Chaplain, M. Salvi, 1988 .

Screened Coulombic impurity bound states in semiconductor quantum wells

G. Bastard, J. Brum, C. Guillemot, 1984 .

The use of superlattices as internal standards for composition and thickness measurements in modulation-doped quantum well structures

M. Baudet, P. Auvray, A. Regreny, 1990 .

Fast photorefractive materials using quantum wells

J. Viallet, P. Gravey, B. Deveaud, 1995 .

A model for longitudinal optical phonons and electron-phonon coupling in GaAs/GaAlAs multilayer structure

F. Clérot, C. Guillemot, 1990 .

Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP

S. Loualiche, A. Corre, D. Lecrosnier, 1989 .