R. J. Luyken

发表

Perspectives of fully-depleted SOI transistors down to 20nm gate length

L. Dreeskornfeld, M. Stadele, R. J. Luyken, 2002, 2002 IEEE International SOI Conference.

High resolution 2D Scanning Spreading Resistance Microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length

L. Dreeskornfeld, M. Specht, M. Stadele, 2003, 2003 IEEE International Conference on SOI.

Impact ionization and band-to-band tunneling in ultrathin body SOI devices with undoped channels

L. Dreeskornfeld, M. Stadele, R. J. Luyken, 2003, 2003 IEEE International Conference on SOI.

Growth and Electronic Properties of Self-Organized Quantum Rings

R. J. Luyken, P. Petroff, A. Lorke, 2001 .

20 nm tri-gate SONOS memory cells with multi-level operation

H. Reisinger, L. Dreeskornfeld, J. Hartwich, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Few-electron ground states of charge-tunable self-assembled quantum dots

Axel Lorke, Serge Huant, Gilberto Medeiros-Ribeiro, 1997 .

The dynamics of tunneling into self-assembled InAs dots

Axel Lorke, Gilberto Medeiros-Ribeiro, Pierre Petroff, 1999 .

Boron Nitride Nanotubes

Steven G. Louie, R. J. Luyken, Vincent H. Crespi, 1995, Science.

Nanoscale FinFETs for low power applications

R. J. Luyken, F. Hofmann, W. Pamler, 2003, International Semiconductor Device Research Symposium, 2003.

Electronic structure of nanometer-size quantum dots and quantum rings

R. J. Luyken, G. Medeiros-Ribeiro, P. Petroff, 1999 .

Drain leakage mechanisms in fully depleted SOI devices with undoped channel [MOSFETs]

L. Dreeskornfeld, J. Hartwich, L. Risch, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Coulomb-coupling in vertically aligned self-assembled InAs quantum dots

R. J. Luyken, G. Medeiros-Ribeiro, P. Petroff, 1999 .

Retention time of novel charge trapping memories using Al/sub 2/O/sub 3/ dielectrics

R. J. Luyken, F. Hofmann, H. Reisinger, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Fine structure in the spectrum of the few-electron ground states of self-assembled quantum dots

R. J. Luyken, G. Medeiros-Ribeiro, P. Petroff, 1998 .

Charging dynamics in vertically aligned InAs quantum dots

R. J. Luyken, P. Petroff, A. Lorke, 2002 .

Spectroscopy of nanoscopic semiconductor rings.

R. J. Luyken, P. Petroff, A. Govorov, 1999, Physical review letters.

Concepts for hybrid CMOS-molecular non-volatile memories

R. J. Luyken, F. Hofmann, R J Luyken, 2003 .

Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications

Michael Specht, Franz Hofmann, Wolfgang Rösner, 2005 .

Sub-40nm tri-gate charge trapping nonvolatile memory cells for high-density applications

H. Reisinger, L. Dreeskornfeld, W. Weber, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Influence of crystal orientation and body doping on trigate transistor performance

Michael Specht, Erhard Landgraf, Wolfgang Rösner, 2006 .

Many-particle ground states and excitations in nanometer-size quantum structures

R. J. Luyken, A. Lorke, 1998 .

Electronic coupling effects in self-assembled InAs quantum dots

R. J. Luyken, G. Medeiros-Ribeiro, P. Petroff, 1998 .

Boron Nitride Nanotubes

R. J. Luyken, S. Louie, V. Crespi, 1995, Science.

Fabrication of ultra-thin-film SOI transistors using the recessed channel concept

R. J. Luyken, F. Hofmann, T. Schulz, 2005 .

Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

Wolfgang Rösner, Frank Schwierz, Ralf Granzner, 2006 .

Design considerations for fully depleted SOI transistors in the 25–50 nm gate length regime

Wolfgang Rösner, L. Dreeskornfeld, J. Hartwich, 2003 .

Novel dual bit tri-gate charge trapping memory devices

H. Reisinger, L. Dreeskornfeld, J. Hartwich, 2004, IEEE Electron Device Letters.