K. Seidel

Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories

T. Melde, K. Seidel, R. Hoffmann, 2009, 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS).

Effect of different PDAs and a PMA on the electrical performance of TiN/ZAZ/TiN MIM capacitors

K. Seidel, M. Czernohorsky, W. Weinreich, 2012, 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG).

How to evaluate applications of nanotechnology for the packaging of organic food

K. Seidel, B. Speiser, 2009 .

Impact of the storage layer charging on Random Telegraph Noise behavior of sub-50nm charge-trap-based TANOS and floating-gate memory cells

K. Seidel, R. Hoffmann, D.A. Lohr, 2010, 2010 IEEE International Integrated Reliability Workshop Final Report.

Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability

T. Melde, K. Seidel, R. Hoffmann, 2009, 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS).

Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes

Albena Paskaleva, Anton J. Bauer, K. Seidel, 2013 .

TEMAZ/O3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal–insulator–metal capacitors

Elke Erben, Mahdi Shirazi, Simon D. Elliott, 2013 .

Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors

K. Seidel, P. Polakowski, W. Weinreich, 2013, 2013 IEEE International Integrated Reliability Workshop Final Report.