R. Hoffmann
发表
T. Melde,
K. Seidel,
R. Hoffmann,
2009,
2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS).
R. Hoffmann,
M. Czernohorsky,
T. Ali,
2020,
2020 IEEE International Reliability Physics Symposium (IRPS).
R. Hoffmann,
M. Czernohorsky,
B. Wehring,
2020,
2020 IEEE International Reliability Physics Symposium (IRPS).
J. Van Houdt,
R. Hoffmann,
M. Czernohorsky,
2019,
2019 19th Non-Volatile Memory Technology Symposium (NVMTS).
Stefan Slesazeck,
Halid Mulaosmanovic,
Thomas Mikolajick,
2015
.
R. Hoffmann,
M. Czernohorsky,
P. Polakowski,
2019,
2019 IEEE 11th International Memory Workshop (IMW).
K. Seidel,
R. Hoffmann,
D.A. Lohr,
2010,
2010 IEEE International Integrated Reliability Workshop Final Report.
T. Melde,
K. Seidel,
R. Hoffmann,
2009,
2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS).
HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention
R. Hoffmann,
M. Trentzsch,
S. Slesazeck,
2012,
2012 4th IEEE International Memory Workshop.
R. Hoffmann,
T. Mikolajick,
L. Frey,
2012,
IEEE Electron Device Letters.