N. Hashikawa
发表
Direct observation of crystallization of HfO2 promoted on silicon surfaces in gate dielectric stacks
Y. Oshima,
K. Takayanagi,
Suhyun Kim,
2012
.
H. Sawada,
Y. Oshima,
K. Takayanagi,
2010
.
H. Tanimoto,
T. Futase,
N. Hashikawa,
2010,
2010 IEEE International Reliability Physics Symposium.
H. Mori,
M. Konno,
T. Yaguchi,
2008
.
Y. Mashiko,
M. Ikeno,
K. Fukumoto,
1998
.
H. Sawada,
Y. Oshima,
K. Takayanagi,
2010
.
T. Futase,
Y. Inaba,
T. Kamino,
2009,
IEEE Transactions on Semiconductor Manufacturing.
T. Hirano,
Shohei Terada,
K. Asayama,
2009
.
H. Tanimoto,
T. Futase,
N. Hashikawa,
2011,
IEEE Transactions on Semiconductor Manufacturing.
K. Asai,
K. Maekawa,
K. Kashihara,
2008,
IEEE International Reliability Physics Symposium.
H. Mori,
T. Yamaguchi,
Shohei Terada,
2007
.
K. Asai,
H. Oda,
T. Okudaira,
2007,
2007 IEEE International Electron Devices Meeting.
H. Tanimoto,
T. Futase,
Y. Inaba,
2010,
2010 IEEE International Reliability Physics Symposium.