Phongsaphak Sittimart

发表

Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering

T. Yoshitake, B. Paosawatyanyong, Peerasil Charoenyuenyao, 2022, Materials Science in Semiconductor Processing.

Physical Properties of Fe3Si Films Coated through Facing Targets Sputtering after Microwave Plasma Treatment

T. Yoshitake, B. Paosawatyanyong, R. Phatthanakun, 2021, Coatings.

Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

T. Yoshitake, Phongsaphak Sittimart, N. Promros, 2017 .

Carrier transportation properties and series resistance of n-type β-FeSi2/p-type Si heterojunctions fabricated by RF magnetron sputtering

Phongsaphak Sittimart, N. Promros, A. Nopparuchikun, 2017 .

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

T. Yoshitake, Eslam Abubakr, Abdelrahman Zkria, 2020, Journal of Nanomaterials.

Impact of Laser‐Induced Graphitization on Diamond Schottky Barrier Diodes

S. Ohmagari, T. Yoshitake, H. Umezawa, 2022, physica status solidi (a).

Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application

S. Ohmagari, T. Yoshitake, H. Kato, 2022, AIP Advances.

Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

T. Yoshitake, Yūki Tanaka, Peerasil Charoenyuenyao, 2020 .

Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions

Phongsaphak Sittimart, N. Promros, A. Nopparuchikun, 2018 .

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Phongsaphak Sittimart, N. Promros, A. Nopparuchikun, 2017 .

Reverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering

T. Yoshitake, B. Paosawatyanyong, Peerasil Charoenyuenyao, 2022, Materials Science in Semiconductor Processing.

Epitaxial growth of β-FeSi2 thin films on Si(111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection

T. Yoshitake, T. Mostafa, Mahmoud Shaban, 2016 .

Thermally Stable and Radiation‐Proof Visible‐Light Photodetectors Made from N‐Doped Diamond

S. Ohmagari, T. Yoshitake, H. Umezawa, 2023, Advanced Optical Materials.

The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors

T. Yoshitake, Chien-Yie Tsay, Yun Chen, 2022, Materials.

Characterization of n-Type Nanocrystalline Iron Disilicide/Intrinsic Ultrananocrystalline Diamond/Amorphous Carbon Composite/p-Type Silicon Heterojunction Photodiodes

T. Yoshitake, T. Hanada, K. Hanada, 2015 .

Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding

S. Ohmagari, T. Yoshitake, H. Umezawa, 2021, AIP Advances.

Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates

S. Ohmagari, T. Yoshitake, Phongsaphak Sittimart, 2020, Japanese Journal of Applied Physics.

Wetting state and mechanical property alteration for the Fe3Si films using rapid thermal annealing under various temperatures

B. Paosawatyanyong, Hiroshi Naragino, Nattakorn Borwornpornmetee, 2023, Heliyon.

Impedance characteristics under different voltages of n-β-FeSi2/p-Si heterojunctions constructed via facing target sputtering

T. Yoshitake, B. Paosawatyanyong, Peerasil Charoenyuenyao, 2023, Materials Science in Semiconductor Processing.