A. Sulaiman

Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition

A. Shuhaimi, N. Talik, M. Khudus, 2019, Japanese Journal of Applied Physics.

Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD

A. Shuhaimi, N. Zainal, Hongjian Li, 2018, Superlattices and Microstructures.

Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes

M. N. Norizan, Mohd Fairus Ahmad, Z. Hassan, 2021 .

Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD

A. Shuhaimi, N. Talik, M. A. Abdul Khudus, 2019, CrystEngComm.