Joo-Won Yoon

FABRICATION AND CHARACTERIZATION OF MFIS-FET USING Bi3.25La0.75Ti3O12/ZrO2/Si STRUCTURE

Jun-Seo Park, Byung-Eun Park, Gwang-Geun Lee, 2006 .

Electrical characteristics of Si MFIS-FETs using P(VDF-TrFE) thin films

H. Ishiwara, Sung‐Min Yoon, Joo-Won Yoon, 2011 .

Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films

H. Ishiwara, S. Ohmi, Byung-Eun Park, 2008 .

Low-voltage operation and excellent data retention characteristics of metal-ferroelectric-insulator-Si devices based on organic ferroelectric films

H. Ishiwara, Xubing Lu, Joo-Won Yoon, 2009 .

The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

H. Ishiwara, Y. Fujisaki, Sung‐Min Yoon, 2011 .