N. Hefyene

A Physical Analysis of High Voltage MOSFET Capacitance Behaviour

Adrian M. Ionescu, Yogesh Singh Chauhan, C. Anghel, 2005, ISIE 2005.

Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

M. Vermandel, A.M. Ionescu, R. Gillon, 2001, 31st European Solid-State Device Research Conference.

Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues

A.M. Ionescu, R. Gillon, C. Anghel, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

A.M. Ionescu, B. Bakeroot, E. Vestiel, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Physical modelling strategy for (quasi-) saturation effects in lateral DMOS transistor based on the concept of intrinsic drain voltage

A.M. Ionescu, M. Vermandel, B. Bakeroot, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Universal Test Structure and Characterization Method for Bias-Dependent Drift Series Resistance of HV MOSFETs

R. Gillon, C. Anghel, S. Frere, 2002, 32nd European Solid-State Device Research Conference.

EKV compact model extension for HV lateral DMOS transistors

Adrian M. Ionescu, Renaud Gillon, Jean-Michel Sallese, 2002, The Fourth International Conference on Advanced Semiconductor Devices and Microsystem.

Electrical characterisation of high voltage MOSFETs using MESDRIFT

R. Gillon, B. Bakeroot, C. Anghel, 2003, 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676).

New method for temperature-dependent thermal resistance and capacitance accurate extraction in high-voltage DMOS transistors

M. Tack, R. Gillon, C. Anghel, 2003, IEEE International Electron Devices Meeting 2003.