L. Hutter

Optimized 25 V, 0.34 m/spl Omega//spl middot/cm/sup 2/ very-thin-RESURF (VTR), drain extended IGFETs in a compressed BiCMOS process

H.-T. Yuan, Chin-Yu Tsai, J. Arch, 1996, International Electron Devices Meeting. Technical Digest.

Gate Oxide Leakage and Floating Gate Capacitor Matching Test

L. Hutter, Weidong Tian, J. Trogolo, 2007, 2007 IEEE International Conference on Microelectronic Test Structures.

The optimization of LBC6 power/mixed-signal IC BiCMOS process

J. Smith, L. Hutter, S. Pendharkar, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

A 0.7 /spl mu/m linear BiCMOS/DMOS technology for mixed-signal/power applications

T. Efland, J. Erdeljac, L. Hutter, 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.