Suk Hyun Lee

发表

Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm

C. S. Hwang, M. Park, H. Park, 2022, Advanced Electronic Materials.

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film

C. S. Hwang, M. Park, H. Park, 2022, Advanced Electronic Materials.

Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer

Se Hyun Kim, C. Hwang, M. Park, 2021, Applied Physics Letters.

Evolution of the Ferroelectric Properties of AlScN Film by Electrical Cycling with an Inhomogeneous Field Distribution

C. S. Hwang, H. Park, Seung Kyu Ryoo, 2023, Advanced Electronic Materials.

Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer

C. Hwang, S. Hyun, D. Cho, 2021, Advanced Electronic Materials.

Top Electrode Engineering for High‐Performance Ferroelectric Hf0.5Zr0.5O2 Capacitors

C. S. Hwang, D. Cho, M. Park, 2023, Advanced Materials Technologies.

Atomic layer deposition of HfNx films and improving the film performance by annealing under NH3 atmosphere

C. Hwang, H. Park, B. Kim, 2023, Journal of Materials Chemistry C.

Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric-dielectric bilayer.

C. Hwang, S. Hyun, M. Oh, 2021, Nanoscale.

Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al ₂ O ₃ ‐Hf _0.5 Zr _0.5 O ₂ ‐Al ₂

C. S. Hwang, H. Park, B. Kim, 2022, Advanced Functional Materials.

Exploring the Physical Origin of the Negative Capacitance Effect in a Metal–Ferroelectric–Metal–Dielectric Structure

C. S. Hwang, H. Park, Jaeyong Song, 2023, Advanced Functional Materials.

Influences of the inhomogeneity of the ferroelectric thin films on switching current

C. Hwang, H. Park, Kyung Do Kim, 2023, MRS Communications.