F. Wirbeleit

Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and SixGe1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals

F. Wirbeleit, 2010 .

Non-Gaussian Diffusion Model for Phosphorus in Silicon Heavy-Doped Junctions

F. Wirbeleit, 2009 .

A multi-variable analysis of the influence of process parameters on VHF PECVD deposition process for amorphous silicon

F. Wirbeleit, 2000 .

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

D. Mocuta, C. Norris, C. Radens, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

USJ Dopant Bleaching and Device Effects in Advanced Microelectronic Plasma Enhanced Resist Strip Processing

V. Grimm, I. Berry, C. Krüger, 2008 .