T. Noda

Fluorine-enhanced boron diffusion induced by fluorine postimplantation in silicon

T. Noda, 2004 .

Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

T. Hoffmann, S. Thirupapuliyur, R. Schreutelkamp, 2008 .

Two-dimensional carrier profiling with sub-nm resolution using SSRM: From basic concept to TCAD calibration and device tuning

W. Vandervorst, P. Eyben, T. Noda, 2009, 2009 International Workshop on Junction Technology.

Modeling of indium diffusion and end-of-range defects in silicon using a kinetic Monte Carlo simulation

Taiji Noda, T. Noda, 2003 .

Evolution of end-of-range damage and transient enhanced diffusion of indium in silicon

T. Noda, 2002 .

Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in silicon

H. Umimoto, S. Odanaka, T. Noda, 2000 .

Modeling of junction formation in scaled Si devices

W. Vandervorst, C. Vrancken, T. Noda, 2014 .