Kentaro Shioura

Novel characterization method for the nitrogen doping concentration in heavily nitrogen-doped 4H-SiC crystals by Raman scattering microscopy

N. Ohtani, M. Nakano, Kaito Yokomoto, 2020, Japanese Journal of Applied Physics.

Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography

N. Ohtani, T. Nakano, Masashi Sonoda, 2018, Journal of Crystal Growth.

Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

Shinya Sato, N. Ohtani, M. Katsuno, 2018, Materials Science Forum.

Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography

N. Ohtani, Kentaro Shioura, N. Shinagawa, 2019, Journal of Crystal Growth.