L. Flannery

发表

A study of the ? Heusler alloy using ultraviolet photoemission spectroscopy

M. Crapper, M. Petty, D. Brown, 1996 .

The experimental density of states of Pd 4d and Ti 3d in the intermetallic compound

M. Crapper, N. Telling, J. G. Smith, 1996 .

MBE growth and characterization of magnesium-doped gallium nitride

C. T. Foxon, I. Harrison, Y. Kudriavtsev, 1998 .

Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

C. T. Foxon, T. S. Cheng, I. Harrison, 1997 .

Ga-metal inclusions in GaN grown on sapphire

C. T. Foxon, E. Larkins, I. Harrison, 1999 .

EXAFS studies of Mg doped InN grown on Al2O3

C. T. Foxon, I. Harrison, J. Mosselmans, 1999 .

Interpretation of the Temperature‐Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

J. Harris, I. Moerman, B. Hamilton, 1999 .

The implications of spontaneous polarization effects for carrier transport measurements in GaN

C. T. Foxon, J. Harris, I. Harrison, 2000 .

Interpretation of the Temperature‐Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

J. Harris, I. Moerman, B. Hamilton, 1999 .

Studies of p-GaN grown by MBE on GaAs(1 1 1)B

C. T. Foxon, I. Harrison, S. Novikov, 1998 .