C. Mallardeau

A 10 K-gate 950 MHz CML demonstrator circuit made with a 1- mu m trench-isolated bipolar silicon technology

Catherine Mallardeau, M. Depey, J.-M. Chateau, 1989 .

Study of Reactive Ion Etching Processes for Schottky Barrier Diode Formations

G. Pananakakis, D. Bauza, C. Mallardeau, 1993 .

Effect of sputter-etching conditions on the barrier characteristics and the process-induced defects in (Ti-W)/Si Schottky diodes

Y. Morand, D. Bauza, C. Mallardeau, 1989 .

Electrical Properties and Sputter-etched Induced Defects in Ti-W/Si Schottky Diodes

Y. Morand, D. Bauza, C. Mallardeau, 1989, ESSDERC '89: 19th European Solid State Device Research Conference.