Carl Radens

A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With 0.7 V Operation Enabled by Stability, Write-Ability and Read-Ability Enhancements

Carl Radens, Harold Pilo, Igor Arsovski, 2011, IEEE Journal of Solid-State Circuits.

Super Fast Physics-Based Methodology for Accurate Memory Yield Prediction

Rajiv V. Joshi, Sudesh Saroop, Rouwaida Kanj, 2015, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

A 64Mb SRAM in 32nm High-k metal-gate SOI technology with 0.7V operation enabled by stability, write-ability and read-ability enhancements

Carl Radens, Harold Pilo, Igor Arsovski, 2011, 2011 IEEE International Solid-State Circuits Conference.