Cherifa Tahanout

Simple and fast simulation approach to investigate the NBTI effect on suspended gate MOS devices

H. Tahi, B. Nadji, Cherifa Tahanout, 2020, International Journal of Electronics Letters.

Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field

Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, 2017, IEEE Transactions on Device and Materials Reliability.

Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOSFET Devices

A. Benabdelmoumene, B. Djezzar, A. Chenouf, 2015, IEEE Transactions on Device and Materials Reliability.

Using the charge pumping geometric component to extract NBTI induced mobility degradation

B. Djezzar, A. Chenouf, H. Tahi, 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

Deep Analysis of the Geometric Component in Charge Pumping of Polycrystalline Silicon Thin-Film Transistors

B. Djezzar, K. Benmessai, H. Tahi, 2015, IEEE Transactions on Electron Devices.