Yasuharu Ohta

发表

Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

K. Toko, M. Miyao, Takanori Tanaka, 2010 .

Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth

K. Toko, M. Miyao, Takanori Tanaka, 2011 .

Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators

K. Toko, M. Miyao, I. Mizushima, 2011 .

Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern

K. Toko, M. Miyao, I. Mizushima, 2011 .

(100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique

K. Toko, M. Kurosawa, M. Miyao, 2010 .

Growth-direction-dependent characteristics of Ge-on-insulator by Si–Ge mixing triggered melting growth

K. Toko, M. Miyao, Takahiro Tanaka, 2011 .

SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator

K. Toko, M. Kurosawa, M. Miyao, 2011 .