Y. Ma

发表

Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon

R. Job, A. Ulyashin, Y. L. Huang, 2004 .

Ultraviolet electroluminescence at room temperature from a pn junction of heteroepitaxial diamond film by CVD

W. L. Wang, Ya-bo Zhu, C. Cai, 2003 .

Vapor-Phase SiO2 Etching and Metallic Contamination Removal in an Integrated Cluster System

Martin L. Green, L. Feldman, J. Sapjeta, 1995 .

Second‐harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma‐assisted oxidation and deposition processes

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

Growth and characterization of Ta/Ti bi-layer films on glass and Si (1 1 1) substrates by direct current magnetron sputtering

Yaoyu Zhou, Z. Xie, Y. Zhou, 2012 .

DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon

E. Simoen, C. Claeys, W. Fahrner, 2005 .

Characterization of Silicon-Nitride Film Growth by Remote Plasmaenhanced Chemical-Vapor Deposition (Rpecvd)

G. Lucovsky, Z. Lu, S. Habermehl, 1993 .

The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon

E. Simoen, C. Claeys, W. Fahrner, 2005 .

Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

R. Job, A. Ulyashin, Y. Ma, 2003 .

Surface Cleaning Prior to Formation of Si/SiO 2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD)

G. Lucovsky, T. Yasuda, H. Lamb, 1992 .

Low-Temperature Device-Quality SiO 2 /Si (100) Interfaces Prepared By A Combined Remote Plasma Oxidation-Deposition Process

G. Lucovsky, T. Yasuda, Y. Ma, 1991 .

Magnetic properties of pure Fe-Al2O3 nanocomposites

W. Fahrner, R. Job, P. Zhou, 2003 .

P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

E. Simoen, C. Claeys, W. Fahrner, 2005 .

On the Formation Kinetics of Thin Nanopatterned Layers on Silicon Wafers Created by Hydrogen Plasma Exposure

R. Job, Yi Huang, Y. Ma, 2004 .

Hydride formation on the platelet inner surface of plasma-hydrogenated crystalline silicon investigated with Raman spectroscopy

R. Job, Yi Huang, Y. Ma, 2005 .

Deposition of single phase, homogeneous silicon oxynitride by remote plasma‐enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices

G. Lucovsky, Y. Ma, 1994 .

Magnetoresistive effect in p-type semiconducting diamond films

W. L. Wang, L. Fang, S. X. Wang, 2002 .

Si-N Bonding at The SiO 2 /Si Interfaces During Deposition of SiO 2 by the Remote Pecvd Process

G. Lucovsky, T. Yasuda, S. Habermehl, 1991 .

Ultrathin oxynitride formation by low energy ion implantation

Z. Lu, W. Ng, Y. Ma, 2000 .

The phase transformation and electrochemical properties of TiNi alloys with Cu substitution: Experiments and first-principle calculations

Z. Zhang, O. Elkedim, M. Jurczyk, 2017 .

Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

H. Liao, M. Molière, Y. Zhao, 2017 .

α-Fe–Al2O3 nanocomposites prepared by sol–gel method

P. Zhou, D. Xue, Y. L. Huang, 2003 .

Control of Process-Induced Defects in the Formation of Single and Multiple layer dielectric Structures for Si Semiconductor Devices

G. Lucovsky, T. Yasuda, S. He, 1992 .

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Eddy Simoen, Joan Marc Rafí, Johan Lauwaert, 2009 .

Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition

G. Lucovsky, T. Yasuda, Y. Ma, 1993 .

Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies

J. Wortman, V. Misra, G. Lucovsky, 1994 .

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

G. Lucovsky, S. Hattangady, T. Yasuda, 1994 .

Control of Si-SiO 2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes

Veena Misra, B. Hornung, G. Lucovsky, 1993 .

Study on Sensitivity of Nano-Grain ZnO Gas Sensors

K. J. Liao, W. L. Wang, Y. Ma, 2002 .

Resonant Raman spectroscopy of (Mn,Co)-codoped ZnO films

Zhenhua Ni, Zexiang Shen, T. Yu, 2008 .

Blistering of implanted crystalline silicon by plasma hydrogenation investigated by Raman scattering spectroscopy

H. Fiedler, T. Mueller, W. Fahrner, 2006 .

Trapping of hydrogen in argon-implanted crystalline silicon

W. Fahrner, R. Job, M. Beaufort, 2005 .

Optical properties of Ag nanoparticle embedded silicate glass prepared by field-assisted diffusion

D. Li, H. Wei, Y. Ma, 2011 .

Photocatalytic activity of TiO2 films grown on different substrates.

Ying Ma, J. Yao, Y. Ma, 2001, Chemosphere.

μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process

R. Job, L. Keller, Yi Huang, 2005 .

Dissociation, transformation, and recombination of Si-H bonds in hydrogenated crystalline silicon determined by in situ micro-Raman spectroscopy

W. Fahrner, R. Job, Yi Huang, 2005 .

Non equilibrium anisotropic excitons in atomically thin ReS2

A. Kis, T. Heine, M. Baranowski, 2018, 2D Materials.

Ultraviolet laser properties of diamond films by CVD

Yong Li, W. L. Wang, Kejun Liao, 2002, SPIE/COS Photonics Asia.

Suppression of hydrogen diffusion at the hydrogen-induced platelets in p-type Czochralski silicon

W. Fahrner, R. Job, Y. Ma, 2005 .

Low temperature plasma-assisted oxidation and thin-film deposition processes for forming device-quality SiO2/Si and composite dielectric-SiO2/Si heterostructures

G. Lucovsky, T. Yasuda, S. Habermehl, 1992 .

Low‐temperature formation of device‐quality SiO2/Si interfaces by a two‐step remote plasma‐assisted oxidation/deposition process

G. Lucovsky, T. Yasuda, S. Habermehl, 1992 .

Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition of SiO2 on plasma‐processed Si substrates

G. Lucovsky, T. Yasuda, S. Habermehl, 1992 .

Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process

G. Lucovsky, S. Habermehl, G. Lucovsky, 1992 .

Surface analysis, depth profiling, and evaluation of Si cleaning procedures by postionization sputtered neutral mass spectrometry

M. Green, S. Downey, M. Wise, 1996 .

Intrinsic ultrathin topological insulators grown via molecular beam epitaxy characterized by in-situ angle resolved photoemission spectroscopy

Z. Shen, F. Schmitt, I. Vishik, 2012, 1205.4258.

Dependence of Hydrogen Diffusion on the Electric Field in p-Type Silicon

R. Job, Yi Huang, Y. Ma, 2004 .

Three-Layer Structure of Hydrogenated Czochralski Silicon

W. Fahrner, R. Job, M. Beaufort, 2004 .

Pulsed laser deposition of ZnO honeycomb structures on metal catalyst prepatterned Si substrates

Z. Shen, T. Yu, X. Zeng, 2009 .

Ultrathin device quality oxide‐nitride‐oxide heterostructure formed by remote plasma enhanced chemical vapor deposition

G. Lucovsky, G. Lucovsky, T. Yasuda, 1994 .

Study on Piezoresistive of Doped Carbon Nanotube Films

C. Cai, J.W. Lu, K. Liao, 2005 .

Influence of the annealing conditions on the polarization and electromechanical response of high‐energy‐electron‐irradiated poly(vinylidene fluoride trifluoroethylene) copolymer

Fred B. Bateman, Cheng Huang, Feng Xia, 2003 .

Effect of Alloy Composition on the Optoelectronic Properties of Hydrogenated Microcrystalline Silicon-Germanium Films Deposited with Various Hydrogen Dilution

Y. Ma, T. W. Li, Y. Xu, 2020, IOP Conference Series: Materials Science and Engineering.

Study of thermal stability of ZnO:B films grown by LPCVD technique

Jinghua Yin, Liqun Zhang, D. Liu, 2012 .

Si(100) Surface Preparation by In-Situ or in-Vacuo Exposure to Remotely Plasma-Generated Atomic Hydrogen: Applications to Deposited SiO 2 and Epitaxial Growth of Si

G. Lucovsky, R. Nemanich, T. Yasuda, 1990 .

Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second‐harmonic generation at these interfaces

H. Kurz, G. Lucovsky, T. Yasuda, 1993 .

Silicon Pyramidal Texture Formed in Pure Hydrogen Plasma Exposure

D. Xue, W. Fahrner, R. Job, 2005 .

Evaluation of lattice strain in ZnO thin films based on Williamson-Hall analysis

Y. Chang, J. Yin, Y. Ma, 2019 .

Formation of Si–SiO2 stacked‐gate structures by plasma‐assisted and rapid‐thermal processing: Improved device performance through process integration

J. Wortman, V. Misra, G. Lucovsky, 1994 .

Investigation of the emitter band gap widening of heterojunction solar cells by use of hydrogenated amorphous carbon silicon alloys

T. Mueller, W. Fahrner, R. Job, 2007 .