P. Errani

发表

Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 10 16 n/cm 2

V. Cindro, A. Cavallini, A. Castaldini, 2006 .

Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons

V. Cindro, A. Cavallini, A. Castaldini, 2006, IEEE Transactions on Nuclear Science.