K. Maruyama

Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

S. Hayashi, S. Higashi, H. Hanafusa, 2014 .

Synthesis of bithiazole-based semiconducting polymers via Cu-catalysed aerobic oxidative coupling

T. Kanbara, J. Kuwabara, T. Yasuda, 2018 .

Metallonanobelt: A Kinetically Stable Shape-Persistent Molecular Belt Prepared by Reversible Self-Assembly Processes.

R. Yamamoto, Y. Sakata, Shigehisa Akine, 2018, Inorganic chemistry.

Guest Vapor-Induced State Change of Structural Liquid Pillar[6]arene.

M. Mizuno, T. Ogoshi, T. Yamagishi, 2019, Journal of the American Chemical Society.

Suppression of Homocoupling Side Reactions in Direct Arylation Polycondensation for Producing High Performance OPV Materials

T. Kanbara, J. Kuwabara, T. Yasuda, 2016 .

High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer

S. Hayashi, S. Higashi, H. Hanafusa, 2015 .

Activation of impurity atoms in 4H-SiC wafer by atmospheric pressure thermal plasma jet irradiation

S. Higashi, H. Hanafusa, K. Maruyama, 2016, 2016 16th International Workshop on Junction Technology (IWJT).

Estimation of Phosphorus-Implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis

S. Hayashi, S. Higashi, H. Hanafusa, 2015 .