H. Lahrèche

发表

A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes

T. Monteiro, E. Pereira, C. Brylinski, 2000 .

Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE

D. Pavlidis, B. Damilano, R. Langer, 2003 .

Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates

G. Meneghesso, E. Zanoni, V. Hoel, 2007, 2007 IEEE International Electron Devices Meeting.

Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

R. Langer, M. Poisson, J. Domagala, 2008 .

NEAR-BAND GAP SELECTIVE PHOTOLUMINESCENCE IN WURTZITE GAN

B. Beaumont, P. Gibart, M. Teisseire, 1999 .

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

P. Lorenzini, Pierre Gibart, Mathieu Leroux, 2000 .

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

V. Hoel, A. Soltani, R. Langer, 2010 .

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

S. Delage, C. Gaquiere, D. Ducatteau, 2006, IEEE Electron Device Letters.

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

C. Gaquiere, D. Ducatteau, J.C. De Jaeger, 2004, IEEE Electron Device Letters.

Si-diffused GaN for enhancement-mode GaN mosfet on si applications

J. Chyi, F. Ren, S. Pearton, 2006 .

Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers

P. Vennégués, M. Laügt, M. Vaille, 1999 .

Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy

E. Feltin, P. de Mierry, M. Leroux, 2001 .

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Pierre Gibart, Bernard Beaumont, Eric Feltin, 2001 .

Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

M. Leroux, M. Laügt, M. Vaille, 2000 .

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

S. Haffouz, Pierre Gibart, Bernard Beaumont, 1998 .

AlGaN/GaN HEMTs on epitaxies grown on composite substrate

C. Brylinski, H. Gerard, J.C. De Jaeger, 2007, 2007 European Microwave Integrated Circuit Conference.

Phase separation in metalorganic vapor-phase epitaxy AlxGa(1−x)N films deposited on 6H–SiC

P. Vennégués, H. Lahrèche, 2000 .

Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation.

F. Omnès, P. Vennégués, S. Haffouz, 1999 .

Photoreflectance study of GaAsSb/InP heterostructures

G. Guillot, C. Bru-Chevallier, H. Chouaib, 2005 .

Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE from 3D islands and lateral overgrowth

P. Vennégués, B. Beaumont, P. Gibart, 1999 .

Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

N. Grandjean, F. Semond, R. Triboulet, 2001 .

Application of ZnO to Passivate the GaN-based Device Structures

S. Delage, I. Pasternak, E. Kamińska, 2007 .

Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates

B. Gila, L. Voss, J. Kim, 2008 .

AlGaN/GaN High Electron Mobility Transistors on Si/SiO 2 /poly-SiC Substrates

Jenshan Lin, F. Ren, S. Pearton, 2006 .

Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

D. Théron, F. Omnès, X. Wallart, 2000 .

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

L. Buchaillot, Y. Cordier, D. Théron, 2009 .

Electrical Performance of GaN Schottky Rectifiers on Si Substrates

F. Ren, S. Pearton, L. Voss, 2006 .

Observation of random telegraph signal in SiC Schottky diodes

T. Ouisse, H. Lahreche, T. Ouisse, 1997 .

Low pressure MOVPE grown AlGaN for UV photodetector applications

E. Monroy, F. Omnès, F. Calle, 1999 .