I. Chowdhury

Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1° offcut substrate using dichlorosilane as Si precursor

T. Sudarshan, M. Chandrashekhar, T. Rana, 2013 .

High Purity Semi-Insulating 4H-SiC Epitaxial Layers by Defect-Competition Epitaxy: Controlling Si Vacancies

P. Klein, T. Sudarshan, R. Kozłowski, 2011, 1104.4509.

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

P. Klein, T. Sudarshan, J. Caldwell, 2010, 1011.1039.

Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

P. Klein, T. Sudarshan, J. Caldwell, 2010 .

Graphene to Graphane: Novel Electrochemical Conversion

R. Zhang, J. Weidner, T. Sudarshan, 2010, 1010.5458.

Doping Dependence of Thermal Oxidation on n-Type 4H-SiC

T. Sudarshan, M. Chandrashekhar, F. Zhao, 2010, IEEE Transactions on Electron Devices.