Z. Yanovitskaja

发表

Monte Carlo Simulation of As2 Adsorption on GaAs Surface

A. Nastovjak, N. Shwartz, A. Zverev, 2006, International Workshops and Tutorials on Electron Devices and Materials.

Kinetic Monte Carlo simulation of thin film morphology evolution during growth

D. V. Brunev, A. V. Zverev, N. Shwartz, 2003, 2003 Siberian Russian Workshop on Electron Devices and Materials. Proceedings. 4th Annual (IEEE Cat. No.03EX664).

Evolution of porous surfaces Si[111] and Si[100] during annealing and epitaxy processes (simulation)

A. V. Chemakin, A. V. Zverev, N. Shwartz, 2001, 2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469).

The effects of monovacancies on the terrace width during sublimation from the (111) surface of a diamond-like crystal

A. V. Zverev, I. Neizvestny, N. L. Shvartz, 2003 .

Monte Carlo simulation of steps behavior on Si(111) surface during sublimation

A. V. Zverev, N. Shwartz, I. Neizvestny, 2000 .

Monte Carlo Simulation of SiOx Layers Annealing

A. V. Zverev, N. Shwartz, Z. Yanovitskaja, 2007, 2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials.

Monte Carlo simulation of MBE and oxidation of porous silicon surface for production nanochannel membranes

S. I. Romanov, N. Shwartz, Ya. V. Titovskaya, 2009, 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.

Schwoebel barriers and quantum dot lateral size equalization during epitaxial growth

D. V. Brunev, N. Shwartz, I. Neizvestny, 2001 .

Monte Carlo Simulation of Silicon Nanowhiskers Growth

A.G. Nastovjak, N.L. Shwartz, Z.Sh. Yanovitskaja, 2007, 2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials.

Monte Carlo simulation of initial stages of Si (111) Oxidation by O2 near critical conditions

N. Shwartz, N. Gladkikh, Z. Yanovitskaja, 2008, 2008 9th International Workshop and Tutorials on Electron Devices and Materials.

Simulation of surface relief effect on ALD process

N. Shwartz, I. Neizvestny, A. Zverev, 2006 .

Ab Initio Calculations of the Si(001) Surface Reconstructions using Density Functional Theory

N. Shwartz, Y. Morokov, Z. Yanovitskaja, 2006, International Workshops and Tutorials on Electron Devices and Materials.

Adatom potential relief on Si (111) - 7/spl times/7 surface

Z.Sh. Yanovitskaja, A. V. Vershinin, A. V. Vershinin, 2004, 2004 International Siberian Workshop on Electron Devices and Materials.

Peculiarities of 3D nanoisland formation on vicinal surfaces during MBE process (simulation)

D. V. Brunev, N. Shwartz, A. N. Karpov, 2002, Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials.