F. Ringeisen

发表

Photoemission study of low pressure hydrogen and disilane adsorption on Si(111) 7 × 7 and Ge(111)

D. Bolmont, J. Koulmann, M. Alaoui, 1990 .

A photoemission investigation of the Si-Au interface and its behaviour under oxygen exposure

J. Derrien, F. Ringeisen, 1983 .

XPS, ESR and resistivity measurements on amorphous silicon oxynitride films (a-SiOxNy) prepared by reactive evaporation of Si in presence of NO2

R. Haug, L. Kubler, A. Jaéglé, 1983 .

Band bending variation of the Si(111) surface during its thermal oxidation

J. Derrien, F. Ringeisen, 1984 .

Photoemission study of low pressure silane adsorption on Si(111)7 × 7

D. Bolmont, D. Muller, J. Koulmann, 1989 .

oxidation of TaSi2 thin films on polycrystalline tantalum

D. Bolmont, J. Koulmann, M. Alaoui, 1992 .

Interfacial reaction between monosilane and a polycrystalline tantalum substrate

D. Bolmont, D. Muller, J. Koulmann, 1989 .

Functional Analysis of Ground Squirrel Hepatitis Virus Enhancer II

G. Fourel, M. Buendia, M. Flajolet, 1998, Journal of Virology.

Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces: A photoemission study

D. Bolmont, D. Steinmetz, J. Koulmann, 1991 .

Monohydride phase on Ge(111) and amorphous germanium surfaces: a photoemission study

D. Bolmont, D. Steinmetz, J. Koulmann, 1990 .

Reversible process of hydrogen adsorption on Si(111)

D. Bolmont, D. Muller, F. Ringeisen, 1987 .

Hydrogenation of amorphized silicon by low energy H+ ion bombardment studied by UPS

D. Bolmont, D. Muller, J. Koulmann, 1989 .

Condensation of disilane or germane on a metallic surface: a photoemission study

D. Bolmont, D. Steinmetz, J. Koulmann, 1992 .

Adsorption de disilane sur Si(111) 7 × 7. Influence de l'hydrogène

D. Bolmont, J. Koulmann, M. Alaoui, 1990 .

Room temperature disilane adsorption on Si(111) and Ge(111) studied by UPS: a comparative study

D. Bolmont, J. Koulmann, M. Alaoui, 1990 .

Formation and properties of the copper silicon(111) interface

J. Derrien, J. Layet, P. Mathiez, 1983 .

Interaction of GeH4 with the Ge(100)2 × 1 surface

D. Bolmont, D. Steinmetz, J. Koulmann, 1995 .

Using decomposed disilane as a gas source for Si epitaxial growth on Ge (111): Photoemission studies

D. Bolmont, D. Steinmetz, J. Koulmann, 1990 .

STRUCTURE AND GROWTH KINETICS OF SiO2 ULTRA THIN FILM ON Si(111) SURFACE

J. Derrien, M. Commandré, F. Ringeisen, 1983 .

Comparative photoemission study of low pressure hydrogen, silane and disilane adsorption on amorphized silicon

D. Bolmont, J. Koulmann, M. Alaoui, 1991 .