Fukuyama Shunichi

Polysilphenylenesiloxane Resin as an Interlevel Dielectric for VLSI Multilevel Interconnections

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Effect of fluorine contamination on barrier metal oxidation

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A novel strain enhanced CMOS architecture using selectively deposited high tensile and high compressive silicon nitride films

S. Satoh, S. Pidin, T. Mori, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..