T. Ishihara

Heating silicon dioxide at 950–1050 °C in the presence of an NH3+CF4 plasma

M. Hirose, M. Morita, T. Ishihara, 1984 .

Electrode dependence and film resistivity effect in the electric-field-induced resistance-switching phenomena in epitaxial NiO films

U. Joshi, H. Koinuma, I. Ohkubo, 2008 .

Combinatorial Fabrications and Electronic-state Evaluations of Functional Complex Metal Oxides

I. Ohkubo, M. Kitamura, M. Oshima, 2009 .

Yb-doped Y–Al–O thin films with a self-organized columnar structure and their anti-Stokes photoluminescence properties

T. Kita, T. Kaizu, N. Nakagawa, 2022, AIP Advances.