K. Iseki

Long Retention Performance of a MFIS Device Achieved by Introducing High-k Al 2 O 3 /Si 3 N 4 /Si Buffer Layer

H. Ishiwara, Y. Fujisaki, K. Iseki, 2003 .

Significant Enhancement of Bi3.45La0.75Ti3O12 Ferroelectricity Derived by Sol-Gel Method

H. Ishiwara, Y. Fujisaki, K. Iseki, 2003 .

Al2O3/Si3N4 stacked insulators for 0.1 μm gate metal–oxide–semiconductor transistors realized by high-density Si3N4 buffer layers

H. Ishiwara, Y. Fujisaki, M. Mao, 2003 .

Improvement of Crystallinity in Sol-Gel Derived (Bi,La)4Ti3O12 Films by Optimizing Dry-Gel Structures

H. Ishiwara, Y. Fujisaki, K. Iseki, 2003 .