Y. Inoue

Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiO x /SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties

H. Funakubo, T. Mimura, Takao Shimizu, 2021 .

Improved environmental stability of highly conductive nominally undoped ZnO layers suitable for n-type windows in thin film solar cells

Michael Algasinger, F. Werner, S. Siebentritt, 2017 .

Piezoelectric properties of LiM-doped (M = V, Nb, Ta, or Zr) AlN thin films

J. Kimura, Y. Umeda, T. Terada, 2021 .

Highly conductive ZnO films with high near infrared transparency

S. Siebentritt, T. Weiss, A. Redinger, 2015 .

Highly conductive ZnO films with high NIR transparency

S. Siebentritt, T. Weiss, A. Redinger, 2015 .

Optimization of buffer layer/i-layer band alignment

R. Klenk, S. Siebentritt, A. Steigert, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

Composition dependence of ferroelectric properties in (111)-oriented epitaxial HfO2-CeO2 solid solution films

H. Funakubo, T. Shiraishi, Wakiko Yamaoka, 2022, Japanese Journal of Applied Physics.

No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO2 Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

H. Funakubo, T. Mimura, Takao Shimizu, 2022, physica status solidi (RRL) – Rapid Research Letters.